Electrical characteristics of tungsten-contacts to 6HSiC at temperatures between 300 and 950 K

Abstract Tungsten-based ohmic contacts to n-6HSiC have been fabricated. The temperature dependence of the contact resistance was studied. It has been found that throughout the experimental temperature range, 300–950 K, the contact resistance remains essentially constant. For (0001)C and (0001)Si orientations the contact resistance behaviour was identical. Specific contact resistance values for the (0001)C orientation were, on average, 2–2.5 times higher compared with the (0001)Si orientation for the same doping level; at N d - N a = 3 × 10 18 cm −3 the respective values are 2 × 10 −3 and 7 × 10 −4 Ω cm 2 . The investigations we have carried out demonstrate the temperature stability of W-based contacts to 6HSiC.