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Impact of the Silicon-nitride Passivation Film Thickness on the Characteristics of InAlAs/InGaAs InP-based HEMTs
Impact of the Silicon-nitride Passivation Film Thickness on the Characteristics of InAlAs/InGaAs InP-based HEMTs
2015
Yinghui Zhong
Jie Yang
Xinjian Li
Peng Ding
Zhi Jin
Keywords:
Silicon nitride
Composite material
Passivation
Materials science
Optoelectronics
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