DETERMINATION OF RECOMBINATION PARAMETERS IN THE BASE OF A BIFACIAL SILICON SOLAR CELL UNDER CONSTANT MULTISPECTRAL LIGHT

Theoretical and experimental investigations of the transient decay have been carried out on a bifacial solar cell placed in a fast-switch-interrupted circuit and submitted to a constant multispectral illumination. The transient decay occurs between two steady states through operating points depending on two variables resistors; this allows us to obtain a transient decay at any operating point of the solar cell I-V curve (from the short circuit to the open one). Three cases of illumination have been considered: the well known front illumination, the back-side illumination and simultaneous illumination of both front and back-side. From the eigen value ω 0 of the fundamental decay mode and the decay time constant, minority carrier lifetime τ b , has been computed. Minority carrier diffusion length is deduced and then the junction recombination velocity S f and the backside recombination velocity S b are determined. The experimental results are in a good agreement with those obtained from steady state study.