Si/SiGe HBTs for Millimeter-wave BiCMOS Technologies

In this paper we review a bit more than 10 years of SiGe BiCMOS technology development and present the best results published to date by the main contenders in the field. Next, with the support of recent results obtained at STMicroelectronics, we discuss the process optimization that led to further increase in the device operating speed. Finally, we present the characteristics of a 260GHz f T , 340GHz f max SiGe HBT technology along with recent circuit results demonstrated in this technology.