Formation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient Spectroscopy

Formation and annealing behavior of the 1.014-eV copper center and its dissociation product (center) in silicon are characterized by photoluminescence (PL) and deep-level transient spectroscopy (DLTS) measurements. On the basis of the findings reported in this study, the structures of the centers are discussed.