THE STRUCTURAL ENVIRONMENT OF Te DOPANTS IN GaAs USING EXAFS IN FLUORESCENCE MODE

The local ccrordination of 'grown-in' Te in GaAs has been determined by FLEXAFS measurements. At carrier concentrations of 8 X 1018 an-3 considerable dilation of the first ccrordination sphere around the dopant takes place, with appreciable contraction of the second co-ordination sphere. The first, second and third nearest