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Development of high power NPN GaN/InGaN double-heterojunction bipolar transistor
Development of high power NPN GaN/InGaN double-heterojunction bipolar transistor
2011
Russell D. Dupuis
Shyh-Chiang Shen
Jae-Hyun Ryou
P. D. Yoder
Keywords:
Heterojunction bipolar transistor
Optoelectronics
Heterostructure-emitter bipolar transistor
Technical report
Materials science
Electronic engineering
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