Detection and evaluation of self-heating effects in n+nn+ AlxGa1-xAs devices by noise temperature measurements
1995
We have investigated self-heating effects in AlGaAs devices influencing hot electron noise temperature measurements. A technique for estimating the temperature change of the structure under test submitted to a high pulsed electric field has been developed. Simulation (electrical and thermal) results are satisfactorily compared with experimental data.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
12
References
5
Citations
NaN
KQI