Quantitative depth profiling of boron in shallow BF+2‐implanted silicon by using laser‐ionization sputtered neutral mass spectrometry

Boron depth profiles in low‐energy BF+2‐implanted silicon were measured using laser‐ionization sputtered neutral mass spectrometry and secondary‐ion mass spectrometry. The laser‐ionization sputtered neutral mass spectrometry measurements provided more accurate boron profiles in the ultrashallow regions (below 20 nm) than the secondary‐ion mass spectrometry measurements. A pileup of boron atoms in the region below 5 nm after annealing was revealed by laser‐ionization sputtered neutral mass spectrometry.