A driving circuit for power device GaN

TECHNICAL FIELD The present invention relates, in particular, it relates to a drive circuit for a power device for GaN. One inventive GaN circuit for driving a power device, characterized in that the drive module comprises a high passage and low passage drive module, GaN? Tube FET Q1, Q2; high-channel-channel power drive module high voltage and high channel HB ground HS, an output terminal connected to the gate of Q1, the low channel driving modules supply voltage VDD and the VSS ground potential, the output terminal Q2 a gate connected; GaN? Drain of the FET transistor Q1 is connected to an external voltage VIN, the source and the drain connected to the Q2. Advantageous effects of the present invention is to effectively prevent the bootstrap capacitor voltage is higher than the GaN? Limit the maximum gate-source voltage of FETs, overcome by the GaN? FETs caused no body diode during the dead time of the bootstrap circuit overcharge, resulting in the problem of high-side FET vulnerable. The present invention is particularly suitable for a power device driving circuit GaN.