High Threshold Voltage Matching Performance on Gate-All-Around MOSFET

For the first time, threshold voltage matching was measured on multiple gate transistors, and particularly on n-channel gate-all-around transistors (GAA) with both doped and undoped channel. Good matching performance is demonstrated on doped channel transistors, thanks to the absence of pocket nor halo implants. But most of all, it is shown that suppressing the channel doping allows to suppress the dopant induced fluctuations contribution and provides an A vt parameter as low as 1.4 mV.mum, which is the best ever reported result on MOS transistors