Old Web
English
Sign In
Acemap
>
Paper
>
Will strain be useful for 10nm quasi-ballistic FDSOI devices? An experimental study
Will strain be useful for 10nm quasi-ballistic FDSOI devices? An experimental study
2007
V. Barral
Thierry Poiroux
F. Rochette
Maud Vinet
Sylvain Barraud
Olivier Faynot
L. Tosti
François Andrieu
Mikael Cassé
B. Previtali
Romain Ritzenthaler
P. Grosgeorges
É. Bernard
Gilles Lecarval
Daniela Munteanu
Jean-Luc Autran
Simon Deleonibus
Keywords:
Silicon on insulator
Strain (chemistry)
Optoelectronics
Materials science
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]