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Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires | NIST
Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires | NIST
2011
Aric W. Sanders
Paul T. Blanchard
Kristine A. Bertness
Matthew D. Brubaker
Ann C. Chiaramonti Debay
Christopher M. Dodson
Todd E. Harvey
Andrew M. Herrero
Devin M. Rourke
John B. Schlager
Norman A. Sanford
Albert V. Davydov
Abhishek Motayed
Denis Tsvetkov
Keywords:
Analytical chemistry
Materials science
NIST
Photoluminescence
Nanowire
Gallium nitride
Optoelectronics
X-ray crystallography
minority carrier injection
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