On the DC extraction of the asymmetric parasitic source and drain resistances for MOSFETs

Abstract Two different parameter extraction methods are proposed in this article. First, a simple DC method is presented to extract the difference between the drain and source series resistance of MOSFETs. This method is valid for any three- or four-terminal MOSFET and it can be used in linear, triode or saturation region. Second, an integration-based method is proposed to extract the drain resistance and the source resistance of thin-film MOSFETs. Both methods were tested using simulated and measured data of two different devices: zinc oxide (ZnO) and polysilicon TFTs.