Energy dependent ripple growth on Si (100) by N+ ion beam irradiation

The energy dependence of pattern formation on Si (100) surface by N+ ion beam irradiation has been studied. Periodic ripple pattern growth has been found for low energy (5-10 keV) N+ ion bombardment at oblique incidence at a fluence of 7 × 1017 ions/cm2. The wave vector of the ripples is parallel to the ion beam direction which follows the Bradley Harper theory of ripple growth [Bradley et. al, J. Vac. Sci. Technol. A 6, 2390 (1988)]. We also found that the lateral (wavelength) and vertical (roughness) dimensions of the ripples increase with the ion energy. Ion penetration and collision cascade dimensions are calculated by Stopping and Range of Ions in Matter (SRIM). It is found that the roughness is proportional to ion penetration depth whereas the wavelength is proportional to the horizontal width of collision cascade.