Improvement of switching endurance of conducting-bridge random access memory by addition of metal-ion-containing ionic liquid

A remarkable improvement of cycling endurance was achieved by the addition of a trace amount of an ionic liquid ([bmim][Tf2N]) containing Cu(Tf2N)2 to the HfO2 layer of a conducting-bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure. The improvement was brought about by the significant improvement of the dispersion of a set voltage and the suppression of the generation and migration of oxygen vacancies owing to the smooth diffusion of Cu ions in ionic liquids.