A compact full W-band monolithic low noise amplifier for millimeter-wave imaging

This paper presents a compact full W-band microwave monolithic integrated circuit (MMIC) low noise amplifier (LNA) using commercially 100nm GaAs pHEMTs technology. With a chip area of 1.1 mm$^{2}$, the circuit consists of 4 stages $4\times30\mu$m gate width transistors. The main performances of the full W-band LNA can be summarized as following: the peak gain of 22dB with 3dB bandwidth of 28GHz from 75GHz to 103GHz, where gain is higher than 17dB within the full W-band. The circuit exhibits the noise figure less than 4.5dB on the entire 75GHz-110GHz range and the minimum of 3.5dB at 82GHz. The input and output return losses are better than 6dB and 9dB on the full W-band, respectively. In conclusion, the LNA predicts outstanding figure-of-merits.