High performance, highly reliable FD/SOI I/O MOSFETs in contemporary high-performance PD/SOI CMOS

Integration of fully-depleted SOI (FD/SOI) MOSFETs for high performance 3.3 V/2.5 V I/O applications in contemporary high-performance partially-depleted SOI (PD/SOI) CMOS is reported for the first time. The FD/SOI MOSFETs feature dual etch-stop layer (dESL) stressor, optimized (minority) carrier lifetime killing implant in source/drain extension, and optimized in-situ steam generated (ISSG) gate oxidation process.