Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells
2010
In this paper, the high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells are investigated numerically by using
the APSYS simulation program. The solar cell structure used as a reference was based on a published article by Geisz et
al. (Appl. Phys. Lett. 91, 023502, 2007). By optimizing the layer thickness of the top and middle cells, the appropriate
solar cell structure which possesses high sunlight-to-energy conversion efficiency is recommended. At AM1.5G and one
sun, the conversion efficiency is improved by 2.3%. At AM0 and one sun, the conversion efficiency is improved by
4.2%. At AM1.5D and one sun, the conversion efficiency is improved by 1.3%. Furthermore, based on the optimized
structures, this device can achieve efficiencies of more than 40% at high concentrations. For the triple-junction solar cell
under AM1.5G solar spectrum, the conversion efficiency reaches 40.2% at 40 suns. For the device under AM0 solar
spectrum, the conversion efficiency reaches 36.2% at 30 suns. For the device under AM1.5D solar spectrum, the
conversion efficiency reaches 40.2% at 50 suns.
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