Energy spectrum of electron trapping centers in CuInAsS3

This paper presents the results of the investigation of the energy spectrum of electronic states due to trapping centers, the role of which in CuInAsS3 is played by lattice defects. The results of the analysis of the thermally stimulated current curves of CuInAsS3 demonstrate that the energy spectrum of trapping centers is localized under the bottom of the conduction band in the energy range E C–(0.14–0.35) eV.