A GaN HFET Device Technology on 3" SiC Substrates for Wireless Infrastructure Applications

This report presents a GaN HFET technology for wireless infrastructure applications. Using an optimized process, low DC-RF dispersion is seen via pulsed I-V measurements. At a drain bias of 48 V and frequency of 2.14 GHz, devices with 0.3 mm gate periphery produce 10-11 W/mm with associated PAE's in the range of 62-67%. Devices with 12.6 mm gate widths produce a saturated output power of 74 W (5.9 W/mm) with an associated power-added efficiency (PAE) of 55%. Under single-carrier W-CDMA conditions, an output power of approximately 10 W and 27% associated power-added efficiency (PAE) is realized at an ACPR of ?40 dBc.