Nonpolar resistive switching of reactively sputtered amorphous Nb2O5

Reactively sputtered amorphous Nb2O5 thin films were studied for resistive switching behaviour. These films show nonpolar resistive switching behaviour in low voltage range of ±(1.5-2.5) V. The threshold switching voltages were independent of polarity of sweep voltage. The Pt/Nb2O5/Al devices showed repeatable nonpolar switching with ON/OFF resistance ratio of 104 or higher. The switching behaviour was found to be independent of electrode material suggesting that switching mechanism does not involve the oxygen ion migration.