High performance type II superlattice focal plane array with 6μm cutoff wavelength

The cutoff wavelength of 6μm is preferable for the full usage of the atmospheric window in the mid-wavelength region. An InAs/GaSb type-II superlattice (T2SL) is the only known infrared material that has a theoretically predicted high performance and also the cutoff wavelength can be easily controlled by changing the thickness of InAs and GaSb. In this study, we used a p-i-n structure with InAs/GaSb T2SL absorber and also barrier layers which was grown on a Tedoped GaSb substrate by molecular beam epitaxy. A mesa-type focal plane array (FPA) with 320×256 pixels and 30μm pixel pitch was fabricated. Mesa structures were formed by inductively coupled plasma reactive ion etching with halogen gas mixture. Prior to the deposition of the SiO 2 passivation film, N 2 plasma treatment was applied for reducing the dark currents. Measured dark current of the sensor was 4x10 -7 A/cm 2 at temperature of 77K and reverse bias of -20mV. The quantum efficiency was 0.35 and the detectivity was 4.1x10 12 cm/Hz 1/2 W. The sensor array was hybridized with the commercially available readout integrated circuit using indium bumps. The noise equivalent differential temperature measured with F/2.3 optics was 31mK at 77K. The operability was over 99%. This FPA is suitable for full usage of the atmospheric window in the mid-wavelength region.