Electrically active interfaces in ZnO varistors

1995 
Abstract The chemical and electronic interface phenomena in doped ZnO ceramics are described. Monoatomic layers of excess bismuth and oxygen at the grain boundaries are responsible for the electrical activity of the interfaces. Characteristic bulk and interface defect levels govern the electrical behaviour. Together with the hot-electron effects observed at breakdown, they determine the highly non-linear conductivity in these materials used for overvoltage protection.
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