An in -situ spectroscopic ellipsometer system

An in -situ spectroscopic ellipsometer system was used to monitor damage and film formation occurring on the surface of silicon wafers during 1200 eV argon ion etching. Ellipsometric data were taken on two kinds of samples, one kind had only a native oxide and the other had a thermally grown oxide. Interpretation of ellipsometric spectra was carried out using derived optical models. The models reflect the state of the sample and allow quantification of the damage kinetics occurring at the substrate surface. Results from these experiments illustrate not only substrate damage formation, but also surface interface changes.