Two-photon Absorption of GaN and AlxGa1-xN Thin Films

Nonlinear absorption of GaN and AlxGa1-xN thin films were studied by the Z-scan technique in the range of 0.53~0.63 Ephoton/Eg, with values ranging from 0.8 to 2.2 cm/GW depending of sample composition, indicating its influences on the nonlinearity.