PbTe quantum dots multilayer for optical switching device
2007
In this work we report the fabrication of PbTe quantum dots multilayers embedded in SiO 2 by
alternatively use of Laser Ablation and Plasma Enhanced Chemical Vapor Deposition
techniques. The quantum dots were grown by pulsed laser deposition (PLD) of a PbTe target
using the second harmonic of a Q-Switched Quantel Nd:YAG laser in high purity argon
atmosphere. The glass matrix was fabricated by PECVD using tetramethoxysilane (TMOS) as
precursor. The RF power was supplied by a RF-150 TOKYO HI-Power operating at 13.56 MHz
and coupled to the RF electrodes through a matching box. The deposition rates as well as the best
growth parameters for both the nanoparticles and the glass matrix were obtained from a previous
work. The morphological properties of the nanostructured material were studied by means of igh
Resolution Transmission Electron Microscopy(HRTEM), grazing-incidence small-angle X-ray
scattering (GISAXS) and X-ray reflectometry . Unlike HRTEM, which extracts information of a
submicron region of the sample and only a few thousand particles are observed, GISAXS signal
is obtained through an average over orders of magnitude larger number of particles (perhaps 10 12
particles) distributed over an area of tens of square millimeters. This fact means that GISAXS
sampling is much more representative of the sample as whole.
Finally, multilayers were grown inside a Fabry-Perot cavity. The complete system operates as
an optical switching device for the infrared region. The device was characterized by Scanning
Electron Microscopy and optical absorption.
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