Dual Q/V-Band SiGe BiCMOS Low Noise Amplifiers Using Q-enhanced Metamaterial Transmission Lines

This brief presents two dual-band low noise amplifiers (LNAs) in Q/V -band fabricated in 0.18- ${\mu }\text{m}$ SiGe BiCMOS technology. The developed LNAs function over the dual (44/60 GHz)-band with an integrated filtering function and achieve peak power gain of 19.1 dB with minimal gain imbalance of less than 0.2 dB between the two bands. The achieved 3-dB bandwidths are more than 6 GHz for each band of the two LNAs with the lowest measured noise figure of 5.6 dB in the targeted frequency bands. The synthesized Q-enhanced metamaterial transmission line structures proposed in this brief contribute a dual-band operation at 44/60 GHz with a rejection of more than 30 dB between the two bands. The Colpitts style negative generation circuit is utilized in conjunction with composite right/left-handed metamaterial transmission line and its dual structure, which is unprecedented, to realize multi-band millimeter-wave integrated circuits.