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Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications
Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications
2018
I. Kars Durukan
Ömer Akpınar
C. Avar
Ali Gültekin
M. K. Öztürk
S. Özçelik
Ekmel Ozbay
Keywords:
Optoelectronics
Heterojunction
Chemistry
High-electron-mobility transistor
Molecular physics
Atomic force microscopy
Metalorganic vapour phase epitaxy
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