High-voltage Millimeter-Wave GaNHEMTswith13.7W/mm PowerDensity

alsogrownforcomparison. Thesheet resistances of Short-gate-length GaNHEMTswithadvanced features theepilayers were270and300Q/ respectively for including a field plate andanInGaNback-confinementthecontrol andtheInGaNBCB devices. Ohmic barrier showed excellent I-Vcharacteristics athighvoltages. contacts wereobtained byTi/Al/Ni/Au annealed at A 0.4-mm widedevice with0.15-gm gate and0.25-gm field 8800Cwithaspecific resistance -0.7 Q-mm.The plate operated upto60V andachieved 13.7W/mmpower atefootprint of0.15m was defined b electrondensity at30GHz,thehighest foraFETatmillimeter-wave gr y y ' ~~~~~~~~~~beam lithography andsubsequent dry-etch oftheSiN frequencies. layeranda shallow recess. A separate T-top