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Theoretical investigation of breakdown effects in wide band gap semiconductor materials
Theoretical investigation of breakdown effects in wide band gap semiconductor materials
2002
Kevin F. Brennan
Enrico Bellotti
Maziar Farahmand
Joe N. Haralson
P. P. Ruden
J. D. Albrecht
Agust Sutandi
Bhautik K. Doshi
Robert N. Bicknell-Tassius
Frank J. Grunthaner
Hans-Erik Nilsson
Michele Goano
Enrico Ghillino
Giovanni Ghione
Carlo Garetto
Yumin Zhang
R.J. Trew
Edward Gebara
Deukhyoun Heo
Young Suh
Joy Laskar
Tsung-Hsing Yu
Mats Hjelm
Keywords:
Wide-bandgap semiconductor
Narrow-gap semiconductor
Optoelectronics
Materials science
Technical report
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