The development of InGaAs short wavelength infrared focal plane arrays with high performance

Abstract High performance, various specifications InGaAs focal plane arrays(FPAs) were studied in Shanghai Institute of Technical Physics (SITP). On the one hand, the typical linear 256 × 1, 512 × 1 and 1024 × 1 FPAs were obtained for response wavelengths from 0.9 μm to 1.7 μm. The typical 320 × 256 FPAs and special sizes 512 × 128, 512 × 256 FPAs for the near infrared multi-spectral imaging were studied. The performance of InGaAs FPAs from 0.9 μm to 1.7 μm has improved enormously. The average peak detectivity, the response non-uniformity and non-operable pixel of the FPAs are superior to 3 × 10 12  cm Hz 1/2 /W, 5% and 1% at the room temperature. On the other hand, the development of the extended InGaAs FPAs was also focused in SITP. The dark current of InGaAs detectors with the response wavelength from 1.0 μm to 2.5 μm decreases to about 10 nA/cm 2 at 200 K. The dark current mechanisms for extended InGaAs detectors were studied by P/A photodiodes. The special sizes 512 × 256 FPAs has been fabricated since 2011. The average peak detectivity, the response non-uniformity and non-operable pixel of the FPAs are superior to 5 × 10 11  cm Hz 1/2 /W, 8% and 2% at 200 K. In order to verify the performance of FPAs, the short wavelength infrared lens was used to form optical imaging system. The buildings, water, trees are sharply imaged by 320 × 256 FPAs with 0.9–1.7 μm wavelength and 512 × 1 FPAs with 0.9–2.5 μm wavelength at about hundreds of meters distance as target at daylight.