Green light emitting diode grown on thick strain-reduced GaN template

Abstract We report a green light-emitting diode (LED) grown on thick strain-reduced GaN template. As the injection current changes from 20 mA to 120 mA, blue-shift of EL peak wavelength reduces from 9.3 nm for the LED on sapphire substrate to 6.8 nm for the LED grown on thick strain-reduced GaN template. Furthermore, the light output power and external quantum efficiency of the LED on thick strain-reduced GaN template are respectively 1.48 mW and 2.5% at the forward current of 20 mA, which is twice as much as the LED on sapphire substrate. In contrast, the reverse current is 2 μA lower than that of the LED on the sapphire at −8 V.