Method for large-area bonding of compound semiconductor materials

Method for large-area direct bonding of at least a first wafer having at least a second wafer, characterized, that a final cleaning of each other to be bonded surfaces of the wafer, either at high temperature by a defined action of molecular hydrogen or at a low temperature by the action of molecular hydrogen with simultaneous irradiation is carried out by ultraviolet light and the cleaned surfaces of the wafers are brought into contact only after the final cleaning at a selectable point in time of the process sequence for initiating the bonding process.