Growth and properties of W–Si–N diffusion barriers deposited by chemical vapor deposition

Abstract Films of W–Si–N were deposited by chemical vapor deposition, characterized, and compared to W–Si–N films deposited by physical vapor deposition, or sputtering. A range of different W–Si–N compositions were produced. The deposition temperature was low, 350°C, and the precursors used are accepted by the semiconductor industry. Deposition rates are adequate for a diffusion barrier application. Resistivities range from 350 to 20,000 μ Ω cm, depending on composition. Step coverage of films with compositions expected to be of interest for diffusion barrier applications is 70–100% for aspect ratios of ∼4 at ∼0.25 μ , depending on composition. Films 1000 A thick with a composition W 47 Si 9 N 44 were a effective barrier against Cu up to 700°C.