Reduction of Leakage Currents in Bottom-Gate N-Channel Metal-Induced Crystallization through a Cap Layer Polycrystalline Silicon Thin-Film Transistors by Applying Off-Bias Stress

We have studied the off-bias stress effect on the performance of bottom-gate polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si was crystallized by metal-induced crystallization through a cap layer (MICC) of a-Si. The poly-Si TFT with a n+ a-Si:H source/drain contacts exhibited a field-effect mobility of 12.4 cm2 V-1 s-1, a gate swing of 0.86 V/dec. and the minimum off-state current of <1.2 ?1011 A/?m at Vds = 10 V after off-bias stress. The off-state currents can be reduced significantly by applying off-bias stress for bottom-gate poly-Si TFT.