P‐12: Novel Positive‐Intrinsic‐Oxide Semiconductor (P‐I‐OS) Photo Sensor for Flat Panel Displays

For the first time, photo sensors employing p-type Si and IGZO semiconductor (P-I-OS) have been fabricated with a sensor dimension of W/L = 1600/5. The IGZO layer was deposited using DC sputtering and replaces the conventional n+-doped cathode electrode. The P-I-OS photo sensor is more sensitive to light with shorter wavelengths, and high to low photo-current dynamic range is almost constant from −15V to −2.5V of anode bias. The P-I-OS photo sensor exhibits dynamic range of 53.3 dB under −5V of anode bias and 10,000 lx of illuminated light intensity