A self-consistent numerical model of thin film silicon hydrogen-alloy solar cells

A self-consistent numerical model incorporating exponential tail states and Gaussian-distributed dangling bond states and doping states within the mobility gap is proposed to explain the results of experimental measurements of the dark conductivity, photoconductivity, and performance characteristics of thin-film Si:H solar cells. A one-to-one relationship between fourfold coordinated doping atoms and dangling bonds is included in the model. The model calculation correctly predicts the dependence of dark conductivity on temperature and doping. It exhibits saturation at high phosphorus doping levels as experimentally observed, and correctly predicts the nonlinear dependence of photoconductivity on light intensity. >