Metastable Ge nanocrystalline in SiGe matrix for photodiode

Abstract Amorphous Si 1− x Ge x films were prepared by co-sputtering on an oxidized Si wafer, followed by rapid thermal annealing to form nanocrystal films. The formation of Ge nanocrystals was not at thermodynamic equilibrium formed in the amorphous Si 1− x Ge x matrix. High-resolution transmission electron microscopy was used to characterize the increase in the size of the grains in the Ge nanocrystals as the Ge content increased. The Ge nanocrystals have a greater absorption in the near-infrared region and higher carrier mobility than SiGe crystals, and the variation in their grain sizes can be used to tune the bandgap. This characteristic was exploited herein to fabricate n-Si 1− x Ge x /p-Si 1− x Ge x p–n diodes on insulating substrates, which were then examined by analyzing their current–voltage characteristics. The rectifying property became stronger as the fraction of Ge in the Si 1− x Ge x films increased. The Si 1− x Ge x diodes are utilized as photodetectors that have a large output current under illumination. This paper elucidates the correlations between the structural, optical and electrical properties and the p–n junction performance of the film.