Photoluminescence from Eu ions implanted SiO2 thin films

Abstract Photoluminescence (PL) and PL excitation spectra from Eu 3+ implanted thermal growth SiO 2 thin films have been investigated at room temperature. After annealing at 1000°C in N 2 , the red light emission from Eu ions doped SiO 2 film, corresponding to the 5 D 0 – 7 F J transition of Eu 3+ , was observed. With increasing the annealing temperature ( T a ) to 1200°C, a strong blue light emission band centered at around 450 nm appears. The conversion of Eu 3+ to Eu 2+ is discussed.