Mole Fraction Dependency Electrical Performances of Extremely Thin SiGe on Insulator Junctionless Channel Transistor (SG-OI JLCT)

In this paper, the single-gate junctionless (JL) MOSFET with extremely thin silicon germanium (SiGe) device layer on insulator (ETSG-OI) is explored to identify the short channel effects (SCEs) and electrical behavior of the device. The device incorporates various engineering schemes (channel and spacer engineering scheme) with JL topology on SOI platform. The influence of the SiGe device layer with mole fraction (x) variation (x = 0.25, 0.5, 0.75) is investigated to understand the bandgap differences of the device. Depending on the change in Ge mole fraction, the energy potential, electric field, and drain induced barrier lowering (DIBL) performances are analyzed. From the simulation results at x = 0.25, the ETSG-OI JLCT shows reasonable improvement in ON current (ION) and DIBL at both linear and saturation drain voltages. For different values of x, the energy bandgap tends to vary from 0.6−1.1 eV. It is observed that at x = 0.25 the bandgap is 0.8 eV which is almost near to the bandgap of Si material due to the 25% existence of Ge material.