Silicon bipolar laser driving IC for 5 Gb/s and 45-mA modulation current and its application in a demonstrator system

The design and implementation of a 5-Gb/s silicon bipolar laser driver IC for direct modulation of a laser diode is reported. The adjustable modulation current range is 15-45 mA. The IC can drive 25- Omega laser modules via a 25- Omega transmission line. Typical power dissipation is 930 mW for a modulation current of 45 mA. Though the IC has been fabricated on a production line instead of using a laboratory technology, it is one of the fastest laser driver ICs ever implemented in silicon. The ability to drive an ohmic load is shown, as well as the performance when driving a real laser module. The circuit has been successfully operated in a demonstrator system for digital optical-fiber transmission. >