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NON-OHMIC EFFECTS IN HOPPING CONDUCTION IN DOPED SILICON AND GERMANIUM BETWEEN 0.05 AND 1 K
NON-OHMIC EFFECTS IN HOPPING CONDUCTION IN DOPED SILICON AND GERMANIUM BETWEEN 0.05 AND 1 K
1998
J. Zhang
Wei Cui
Michael Juda
D. McCammon
R. L. Kelley
S. H. Moseley
C. K. Stahle
A. E. Szymkowiak
Keywords:
Ion implantation
Ohmic contact
Germanium
Variable-range hopping
Doping
Condensed matter physics
Nuclear magnetic resonance
Silicon
Physics
Thermal conduction
Electric field
Correction
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