Monte Carlo modeling of wurtzite and 4H phase semiconducting materials
2001
We present a discussion of the complexities encountered in particle simulation models
for noncubic symmetry semiconductors, focusing on the wurtzite and 4H polytypes
of GaN and SiC. We have identified three general issues, band structure, scattering
mechanisms, and band intersections, which in our opinion, constitute the most important
modifications to conventional Monte Carlo simulators for cubic symmetry
semiconductors. It is found that the band intersection points present the greatest
modeling challenge. We discuss the effect of band intersections on the transport
dynamics and our initial attempts at treating transport near these points. Comparison to
experimental data is also made.
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