Ultra-high-Q and wide temperature stable Ba(Mg1/3Ta )O3 microwave dielectric ceramic for 5G-oriented dielectric duplexer adhibition

Abstract With the deployment of 5G (5th generation wireless systems) worldwide, the development of dielectric duplexers more suitable for high-frequency applications is in full swing. Thus, the key material of dielectric duplexers, microwave dielectric ceramics, have attracted widespread attention from scholars. Here, high-performance microwave dielectric ceramics were prepared by adjusting the stoichiometry of Ta5+ of Ba(Mg1/3Tax)O3 within 0.67–0.68. Typically, excellent resonance frequency stability (resonance frequency offset is less than 1.2 MHz) in a wide temperature range (−55–85 °C) is obtained by all samples, which extends to the negative temperature range compared to previous studies. Optimally, the Ba(Mg1/3Ta0.675)O3 ceramic sintered at 1620 °C/12h and annealed at 1550 °C/10h is provided with the microwave dielectric properties of er∼25.021, Q × f∼244,155 GHz, τf ∼ -0.74 ppm/°C, achieving an 11% increase in Q × f value (compared to pure BMT). Comprehensive and excellent performance makes Ba(Mg1/3Ta0.675)O3 ceramics furnish powerful material support for 5G dielectric duplexer applications.