Novel method for pulse control in Nd:YVO 4 /Cr 4+ :YAG passively Q-switched microchip laser

Compact passively Q-switched laser are widely used for a large number of applications due to a simple realization, low cost, high efficiency, high brightness, high repetition rate and with pulse duration from few picoseconds to microsecond range. Cr 4+ :YAG crystal is the most widely used saturable absorber around 1 µm emission, it has been demonstrated that in combination with Nd:YAG, over than 1 MW peak power could be reported [1]. Nevertheless, the repetition rate is limited to few hundred Hz. Nd:YVO 4 is a good candidate for high repetition rate due to a shorter lifetime than Nd:YAG, however, the Nd:YVO 4 /Cr 4+ :YAG passively Q-switched lasers are normally below 100 µJ [2].