Modeling and characterization of a merged PiN Schottky diodes with semi-super junction structure

In this paper a novel merged PiN Schottky rectifier structure based on semi-super junction technique, which is the combination of super junction (SJ) structure and n-bottom assisted layer (BAL), is proposed and demonstrated for a power-switching device. Optimal diode design is obtained exploiting a two dimension analytical model. Devices such as the blocking characteristic, the forward voltage-drop and the reverse recovery are analyzed with two-dimensional numerical simulations and compared with conventional SJ MPS and PiN diodes. The proposed structure without increasing the process difficulty and the cost is very attractive for high voltage and freewheeling rectifiers due to the low forward voltage drop and the soft recovery