Electric-field dependence of electron drift velocity in 4H–SiC

Abstract Room temperature isothermal forward current–voltage characteristics of mesa-epitaxial 4H–SiC Schottky diodes were measured at high electric fields (beyond 10 5  V/cm) in the 34-μm thick n -base doped at 1 × 10 15  cm −3 . The effect of diode self-heating on current was minimized when using single 4-ns pulses. The analytical formula was derived for the dependence of electron drift velocity on electric field along c -axis.