InP, W-band, oscillator stabilized with a resonant cavity created by Wafer Level Packaging

In this paper a W-band oscillator using Wafer Level Packaging (WLP) technology is reported. To the best of the authors' knowledge this is the first oscillator using a stabilizing cavity resonator created through the use of WLP. By using WLP a cavity consisting of more than one substrate can be created. Since quality factor is directly proportional to volume, a cavity of larger volume will lend itself to a better quality factor. In this work, a 2 finger 40 µm device fabricated in Northrop Grumman Aerospace Systems' (NGAS) 0.1µm InP HEMT technology is combined with a stabilizing resonant cavity created using WLP. With this approach, a 101 GHz oscillator has been achieved that has a measured output power of −16.6 dBm and phase noise at a 1 MHz offset of −77.4 dBc/Hz