Realization of C-60 whiskers incorporated chalcopyrite CuInxGa1-xSe2 in Cu2Se/C-60/In3Se2/C-60/Ga2Se3 multilayer structures

Abstract The current article is focused on developing a new class of chalcogenide absorber layer. A multiple stacking of metal selenides with C-60 as an intermatrix layer is fabricated on a glass substrate. Post-annealing of sequential temperatures from 150-350 oC is applied to the multilayer thin film structure. X-ray diffraction revealed a dominant CIGS chalcopyrite structure with a preferential (112) plane orientation upon maximal annealing temperature. Morphological analysis has displayed fullerene whiskers imposed in spherical grains background surface. Films have displayed an appreciable absorption coefficient (≥ 105 cm-1). Tauc plots revealed a near-optimal single direct band gap transition at 1.64 eV for annealed (350 oC) film.